1.2v drive nch mosfet RU1C002UN ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 RU1C002UN ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 20 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 400 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a reference land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a reference land. parameter type drain current parameter (1) gate (2) source (3) drain ? 1 body diode ? 2 esd protection diode *2 *1 *2 * umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 abbreviated symbol : qr ?2 ?1 (3) (1) (2) 1/5 2011.09 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RU1C002UN ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 20 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =20v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =1ma - 0.8 1.2 i d =200ma, v gs =2.5v - 1.0 1.4 i d =200ma, v gs =1.8v - 1.2 2.4 i d =40ma, v gs =1.5v - 1.6 4.8 i d =20ma, v gs =1.2v forward transfer admittance l y fs l 400 - - ms v ds =10v, i d =200ma input capacitance c iss - 25 - pf v ds =10v output capacitance c oss - 10 - pf v gs =0v reverse transfer capacitance c rss - 10 - pf f=1mhz turn-on delay time t d(on) -5-nsv dd 10v, i d =150ma rise time t r - 10 - ns v gs =4.0v turn-off delay time t d(off) - 15 - ns r l =68 ? fall time t f - 10 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =100ma, v gs =0v *pulsed conditions conditions ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * 2/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1C002UN ? electrical characteristics 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.2v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 v gs = 1.2v v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.3v v gs = 1.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 ta= 25c pulsed v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.0v 0 0.1 0.2 0.3 0.4 0.5 0246810 v gs = 1.5v ta=25c pulsed v gs = 1.3v v gs = 2.5v v gs = 1.8v v gs = 1.2v 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.8v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 4.0v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = 1.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.8 static drain-source on-state resistance vs. drain current( ) drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig.9 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] fig.6 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 0.0 0.5 1.0 1 .5 0.00001 0.0001 0.001 0.01 0.1 1 drain current : i d (a) gate-source voltage : v gs (v) fig.3 typical transfer characteristics ta=125c 75c 25c ?25c v ds =10v pulsed 3/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1C002UN 0.1 1 0.01 0.1 1 v ds = 10v pulsed ta= -25c ta=25c ta=75c ta=125c fig.10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain-current : i d [a] source current : i s (a) source-drain voltage : v sd (v) 1.5 1 0.5 0.0 0.01 0.1 1 ta=125c 75c 25c ?25c fig.11 source current vs. source-drain voltage v gs =0v pulsed 0.01 0.1 10 swithing time : t (ns) drain current : i d (a) 100 1000 1 1 fig.13 switching characteristics t d(off) t r t d(on) t f ta =25c v dd =10v v gs =4v r g =10 pulsed 0.01 0.1 1 10 100 1 100 capacitance : c (pf) drain-source voltage : v ds (v) 10 c iss c oss c rss ta =25c f=1mh z v gs =0v fig.14 typical capacitance vs. drain-source voltage 0 0.5 1 1.5 2 2.5 02468 i d = 0.02a i d = 0.2a ta=25c pulsed fig.12 static drain-source on-state resistance vs. gate source voltage static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : v gs [v] 4/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1C002UN ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 5/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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